? semiconductor components industries, llc, 2015 march, 2015 ? rev. 1 1 publication order number: NYC222/d NYC222, nyc226, nyc228 sensitive gate silicon controlled rectifiers reverse blocking thyristors designed and tested for repetitive peak operation required for cd ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. features ? blocking voltage to 600 v ? high surge current ? 15 a ? very low forward ?on? voltage at high current ? low-cost surface mount sot?223 package ? these are pb?free devices maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive of f?state voltage (note 1) (r gk = ik, t j = 40 to +110 c, sine wave, 50 to 60 hz, gate open) NYC222 nyc226 nyc228 v drm, v rrm 50 400 600 v on-state current rms (180 conduction angles, t c = 80 c) i t(rms) 1.5 a average on?state current, (t c = 65 c, f = 60 hz, time = 1 sec) i t(rms) 2.0 a peak non-repetitive surge current, @t a = 25 c, (1/2 cycle, sine wave, 60 hz) i tsm 15 a circuit fusing considerations (t = 8.3 ms) i 2 t 0.9 a 2 s forward peak gate power (pulse width 1.0 sec, t a = 25 c) p gm 0.5 w forward average gate power (t = 8.3 msec, t a = 25 c) p g(av) 0.1 w forward peak gate current (pulse width 1.0 s, t a = 25 c) i fgm 0.2 a reverse peak gate voltage (pulse width 1.0 s, t a = 25 c) v rgm 5.0 v operating junction temperature range @ rated v rrm and v drm t j ?40 to +110 c storage temperature range t stg ?40 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a c onstant current source such that the voltage ratings of the devices are exceeded. scrs 1.5 amperes rms 400 thru 600 volts k g a www. onsemi.com pin assignment 1 2 3 g (gate) k (cathode) a (anode) 4 a (anode) sot?223 case 318e style 11 marking diagram a = assembly location y = year w = work week 22xst = specific device code x = 2, 6 or 8 = pb?free package (note: microdot may be in either location) device package shipping ? ordering information NYC222stt1g sot?223 (pb?free) 1000 /tape & ree l nyc226stt1g sot?223 (pb?free) 1000 /tape & ree l nyc228stt1g sot?223 (pb?free) 1000 /tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 1 ayw 22xst
NYC222, nyc226, nyc228 www. onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction?to?ambient pcb mounted r ja 156 c/w thermal resistance, junction?to?tab measured on mt2 tab adjacent to epoxy r jt 25 c/w maximum device temperature for soldering purposes for 10 secs maximum t l 260 c electrical characteristics (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (v ak = rated v drm /v rrm ; r gk = 1000 )t c = 25 c t c = 110 c i drm , i rrm ? ? ? ? 10 200 a a on characteristics peak forward on?state voltage (note 2) (i tm = 2.2 a peak) v tm ? 1.2 1.7 v gate trigger current (dc) (note 3) t c = 25 c (v ak = 7 vdc, r l = 100 )t c = ?40 c i gt ? ? 30 ? 200 500 a gate trigger voltage (dc) (note 3) t c = 25 c (v ak = 7 vdc, r l = 100 )t c = ?40 c v gt ? ? ? ? 0.8 1.2 v gate non?trigger voltage (v ak = v drm , r l = 100 )t c = 110 c v gd 0.1 ? ? v holding current (v ak = 12 v, r gk = 1000 )t c = 25 c initiating current = 200 ma t c = ?40 c i h ? ? 2.0 ? 5.0 10 ma dynamic characteristics critical rate of rise of off?state voltage (t c = 110 c) dv/dt ? 25 ? v/ s 2. pulse width = 1.0 ms, duty cycle 1%. 3. r gk current not included in measurement. + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode ? forward blocking region i rrm at v rrm (off state)
NYC222, nyc226, nyc228 www. onsemi.com 3 t , maximum allowable a ambient temperature ( c) t , maximum allowable c case temperature ( c) dc dc i t(av) , average on\state current (amps) 1.8 0 0.2 0.4 0.6 0.8 120 1.0 0 20 40 60 80 100 140 i t(av) , average on\state current (amp) current derating 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2.0 100 1.6 20 60 140 = conduction angle = 180 = conduction angle = 180 figure 1. maximum case temperature figure 2. maximum ambient temperature i , instantaneous on\state current (amp) t 1.5 v t , instantaneous on\state voltage (volts) 0 0.5 1.0 2.0 0.01 0.05 2.5 0.02 0.1 0.03 3.0 0.07 0.2 0.3 0.5 0.7 1.0 2.0 5.0 25 c t j = 110 c figure 3. typical forward voltage
NYC222, nyc226, nyc228 www. onsemi.com 4 r(t), transient thermal resistance (normalized) 1000 t, time (ms) 100 0 5000 0.2 2000 500 200 100 20 50 10 5.0 2.0 1.0 0.5 0.05 0.1 0.01 0.02 0.07 0.7 0.03 0.1 0.2 0.3 0.5 1.0 figure 4. thermal response p maximum average power dissipation (watts) (av) i , holding current (ma) h v , gate trigger voltage (volts) gt i gate trigger current ( gt 0.4 0.5 0.6 0.7 0.8 100 0.3 -75 -50 0 25 75 50 -25 t j , junction temperature ( c) v ak = 7.0 v r l = 100 80 20 0110 100 60 40 t j , junction temperature ( c) 1.0 5.0 2.0 -40 10 -20 v ak = 12 v r l = 100 1.0 2.0 3.0 5.0 10 20 30 0 -40 -20 50 20 40 60 80 100 100 110 t j junction temperature ( c) 1.8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2.0 0.2 0.6 i t(av) , average on\state current (amps) 1.6 1.2 0.4 0 dc 1.4 120 1.0 90 0.8 180 60 30 typical characteristics a) figure 5. typical gate trigger voltage figure 6. typical gate trigger current figure 7. typical holding current figure 8. power dissipation 110
NYC222, nyc226, nyc228 www. onsemi.com 5 package dimensions sot?223 (to?261) case 318e?04 issue n style 11: pin 1. mt 1 2. mt 2 3. gate 4. mt 2 a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ??? p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NYC222/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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